Filippov Vladimir Vladimirovich (Doctor of Physical and Mathematical Sciences, Associate Professor, University of Technology and Management named after K.G. Razumovsky (PKU) Lipetsk Cossack Institute of Technology and Management (branch); Lipetsk State Pedagogical University,them. P.P. Semenov-Tyan-Shansky)
Ziyautdinov Vladimir Sergeevich (Candidate of Pedagogical Sciences, Associate Professor, University of Technology and Management named after K.G. Razumovsky (PKU) Lipetsk Cossack Institute of Technology and Management (branch))
Smirnov Mikhail Yuryevich (Candidate of Physical and Mathematical Sciences, Associate Professor, University of Technology and Management named after K.G. Razumovsky (PKU) Lipetsk Cossack Institute of Technology and Management (branch))
Bogonosov Konstantin Aleksandrovich (Candidate of Technical Sciences, Associate Professor, University of Technology and Management named after K.G. Razumovsky (PKU))
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In modern functional electronics and microelectronics, materials with a pronounced character of the anisotropy of electrophysical properties are increasingly being used. Anisotropy properties are associated not only with the nature of their crystal structure, but also with the miniaturization of structural elements in semiconductor systems. The active practical application of these semiconductors in functional electronics requires a qualitative mathematical description of the kinetic phenomena of electron transfer in the bulk of the crystal and at its contacts with the metal. In this paper, a mathematical and computer calculation of electric fields of direct currents in semiconductors with a pronounced anisotropy of electrical conductivity is carried out, followed by a theoretical analysis of the obtained distributions of electric fields. The material of the article will be of interest to everyone who is involved in both modeling the physical properties of anisotropic semiconductor materials and directly studying such materials in an experiment.
Keywords:mathematical model, anisotropic material, electric field distribution, computer simulation, semiconductor, functional electronics.
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Citation link:
Filippov V. V., Ziyautdinov V. S., Smirnov M. Y., Bogonosov K. A. Peculiarities of stationary electric fields in bounded anisotropic semiconductors // Современная наука: актуальные проблемы теории и практики. Серия: Естественные и Технические Науки. -2022. -№08. -С. 131-137 DOI 10.37882/2223-2966.2022.08.37 |
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